Process simulation high performance bipolar and BiCMOS devices

SUPREM IV, an advanced 2-D process simulator based on the latest physical models for silicon process physics, is presented. It is designed to interface directly with 2-D device simulators like PISCES to produce accurate predictions of device structural and electrical characteristics. SUPREM IV, the point defect diffusion models on which it is based, and its application to high-performance bipolar and BiCMOS process and device design are described. In particular, SUPREM IV simulations are compared with a 2- mu m BiCMOS test process. The process technology is sketched, and the simulation results are presented and discussed.<>