A compact physically-based bipolar transistor model

A comprehensive bipolar transistor model for circuit simulation is discussed. The model is physically based and includes new models for the base region, base-collector depletion region, and epitaxial collector region that account for high-current effects. The model has been implemented in the circuit simulator SLICE and shown to model high current densities accurately. The increase in simulation time compared to the Gummel-Poon model is minimized by not requiring iterations within the model code.<>