Study of CNTFET based basic current mirror in comparison with NMOS technologies

The present paper explores and analyses the performance of Carbon Nano Tube Field Effect Transistor (CNTFET) technology in analog domain through its application as a basic current mirror. 32nm channel length-single walled-one tube CNTFET technology has been assessed and compared with 45nm, 32nm and 22nm NMOS technologies through HSPICE simulations of current mirror circuitry. Different methods of comparison like current error, input-output resistances, AC small signal and transient analysis have been employed which highlight the benefits of CNTFET over NMOS technology and its potential to be used for analog VLSI.