0.35 µm AMS silicon MOSFET for continous-wave (CW) sub-THz detection in room temperature

In this paper we report the detection of sub-THz radiation at 220 GHz by using 0.35 μm Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The observation of photoresponse are measured against gate voltage with a drain current effect at room temperature. The measured photoresponse is a superposition of a generally increasing response with a decrease in VGS coupled with a small peak approximately at threshold and there is an evidence that the MOSFET can be a sensitive sub-THz detector in the room temperature.