A numerical investigation of continuous wave parametric gain in silicon nano-waveguides at wavelengths around 1550 nm

We developed a numerical model to investigate continuous wave four wave mixing (FWM) in silicon nano-waveguides with embedded PIN junctions. The model is complemented by fitting to the experimental data. Using the model we show that the FWM gain in silicon can compensate for all relevant loss mechanisms (two photon and free carrier absorption as well as linear loss) provided that the carrier lifetime is low enough (few tens of picoseconds).