Transport modeling of InGaN/GaN multiple quantum well solar cells

This theoretical work analyzes photovoltaic effect in InGaN/GaN solar cells. Our electronic transport model considers intrinsic quantum behaviors like confinement, tunneling, electron-phonon scattering and electron-photon interactions. Based on this model we compare performances of Multiple Quantum Wells (MQW) structure with those of thick-layer device. We show that MQW is a promising candidate that provides better current characteristics. This work sheds light on the importance of finding a good balance between photon-absorption efficiency and transport properties. We also show the unintuitive influence of electron-phonon scattering.