Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level: Extension to p-type silicon

Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By using data measured on n-type silicon wafers with resistivity from 1Ω.cm to 100Ω.cm, we have previously developed a simple mathematical expression to describe the mobility sum as a function of carrier injection, wafer doping and temperature. In this paper, we provide experimental results for p-type silicon wafers from 150K to 450K and show that they are consistent with this parameterization. We show that our parameterization of the mobility sum in silicon is valid for both p-and n-type silicon for various carrier injection, wafer doping and temperature from 150K to 450K. The new parameterization is also an experimental validation of Klaassen's and Dorkel-Leturcq's models under carrier injection at different temperatures.