Design and fabrication of integrated waveguide filter based on high-resistivity silicon

A tri-cavity Chebyshev bandpass filter based on high resistivity silicon is proposed and manufactured at Ku-band. MEMS etching process is utilized to etch via-holes array on high resistivity silicon. A fabricated tri-cavity Chebyshev bandpass filter after being packaged exhibits an insertion loss of 3.7 dB with a 6.8% relative bandwidth at a center frequency of 16 GHz and the return loss is better than 15 dB in the passband.