InxGa1−x as surface channel quantum well MOSFET: Quantum ballistic simulation using mode space approach

In this paper, I-V characteristics of High k stack InGaAs surface channel Quantum Well MOSFET were simulated using Matlab. To simulate the device in quantum ballistic regime we used non equilibrium Green's function formalism. Self-consistent solution of Schrodinger-Poisson equation was performed using FDM method taking 2D electrostatics into account. The charge is well confined in the quantum well. So, mode space approach is applicable & efficient. Simulation results for the Quantum Well device with 55nm gate length have been reported. Variation of I-V characteristics with the change in channel length has also been reported.