A vertical power MOSFET with the extended trench oxide

A vertical power MOSFET with the extended trench oxide is proposed. The key feature of this device structure is that the trench oxide, which is set in the side of the device, is extended to n⁺ substrate. This technique decreases the corner effect of oxide and improves the tradeoff between breakdown voltage (BV) and the specific on-resistance (Ron, sp). Silvaco T-CAD tool is used for the simulation to analyze characteristics of the device.