Modeling, analyzing, and abstracting single event transient propagation at gate level

Soft errors have become one of the most challenging issues that impact the reliability of modern microelectronic systems at terrestrial altitudes. A new methodology to abstract, model, and analyze Single Event Transient (SET) propagation at different abstraction levels (transistor and gate level) is proposed. Transistor level characterization libraries are developed to abstract the impact of input patterns, pulse polarity, and propagation paths characteristics on the SET duration. Thereafter, these libraries are utilized to analyze SET pulse propagation at gate level using MDG model checker. We have implemented the proposed method on different ISCAS85 benchmark combinational circuits. The proposed methodology is orders of magnitude faster than circuit level simulations. Moreover, we have developed gate level characterization libraries to abstract SET pulse propagation behavior at the gate level.