Optoelectronic and interfacial characteristics of GaAs/Si, GaAs/Ge/Si,GaAs/Ge and GaAs/Ge/SiO/sub 2//Si heterostructures

Optoelectronic, optical, electrical, structural, and interfacial characteristics of MOCVD-grown GaAs/Si, GaAs/Ge/Si, GaAs/Ge and GaAs/Ge/SiO₂/Si heterostructures have been comparatively examined. Ge interlayer has been found to improve the GaAs crystallinity. Its chemical effect remains uncertain. GaAs/Ge/SiO₂/Si is geared to 3-D OEIC. Laser recrystallization technique was essential for this structure. RBS, Raman, X-ray, Photoresponse, I-V, C-V, TEM, and Auger analyses have been carried out. RTA has been found to improve crystalline and interface quality.