Design and simulation of Schottky-Source/Drain GaN/AlGaN HEMTs for breakdown voltage improvement

ASchottky Source/Drain(SSD) technology was implemented for the off-state breakdown voltage improvement of GaN/AlGaN HEMTs and its various DC characteristics has been analyzed using SENTAURUS TCAD tools. The proposed GaN/AlGaN HEMT device with SSD technology provides an improvement in breakdown voltage of about 120V as compared to the conventional control GaN/AlGaN HEMTs. The improvement of the off state break down voltage, thus effectively suppresses the source carrier injection in the proposed device. The maximum drain current of the proposed device is found to be680mA/mm at a threshold voltage of a −1.5V. The OFF current of the device is obtained as 1.8e–10A/µm and thus the leakage current of the device is found to be reduced.