Analytical studies of vertical double gate NTFET

Continuous down scaling of MOSFET has resulted in increased short channel and tunneling leakages implying the need for alternate devices such as TFET. The tunneling current is controlled by gate voltage by varying the width of band-to-band tunneling barrier. In this paper, analytical study of a vertical double gate TFET is presented. The tunneling probability and current are derived and analyzed to study the behavior of TFET. Synopsis® device simulation tool MEDICI® is used for the simulations.