Design and Analysis of InP-Based Waveguide Uni-Traveling Carrier Photodiode Integrated on Silicon-on-Insulator Through $\hbox{Al}_{2}\hbox{O}_{3}$ Bonding Layer

Thermal resistance and optical evanescent coupling of InP-based waveguide uni-traveling carrier photodiode (UTC-PD) integrated on silicon on insulator (SOI) through novel Al
₂
O
₃
bonding layer have been investigated with a constant heat spreading model and optical beam propagation method (BPM), respectively. Compared to UTC-PD integrated on SOI through conventional SiO
₂
bonding layer, there is a significant reduction (up to 70.41%) in terms of the total thermal resistance for the same structure through Al
₂
O
₃
bonding layer. On the other hand, based on the evanescent coupling simulation and analysis with BPM, as compared to SiO
₂
bonding scheme, no compromise in optical coupling efficiency was found by using Al
₂
O
₃
bonding layer. Our results suggest that Al
₂
O
₃
bonding layer could be a promising candidate for high-power and high-speed III-V photonic devices integrated on SOI, where thermal dissipation is a major concern.