Examination of catalytic GaAs nanowire growth by Monte Carlo simulation

Examination of catalytic GaAs nanowire growth using Monte Carlo simulation was fulfilled. It was demonstrated that characteristics of NW growth were crucially depended on arsenic to gallium flux ratio. NW grew only starting from certain F_As2/F_Ga value. With following F_As2/F_Ga raise NW growth rate increased and then saturated. Optimal temperature, ratio of gallium and arsenic flux intensities corresponding to maximal GaAs NW growth rate were detected.