Determination of Si - Native SiO2 interface surface state density of SOI-nanowire sensors

The method of determination of the Si - native SiO₂ interface surface state density of double-gate transistors was applied for SOI-nanowire sensors. This method is based on the using of dependence of the top gate voltage on threshold voltage V_thBG (V_TG ) . Si - native SiO₂ interface surface state density of SOI-nanowire sensors immersed in the clear buffer solutions and in the buffer solutions with different concentration of protein was measured.