Experimental switching frequency limits of 15 kV SiC N-IGBT module

This paper presents extensive experimental switching characteristics of a state-of-the-art 15 kV SiC N-IGBT (0.32 cm
²
active area) up to 10 kV, 10 A and 175°C. The influence of the thermal resistance of the module package, cooling mechanism, and the increased energy loss with temperature are investigated for determining the switching frequency limits of the IGBT. Detailed FEM analysis is conducted for extracting the thermal resistance of each layer in the 15 kV module from the IGBT junction to the base plate, and then down to the ambient. Using this thermal information and the experimental switching data, the inductive switching frequency limits are analytically evaluated for liquid and air cooling cases with 660 W/cm
²
and 550 W/cm
²
power dissipation densities respectively, considering 150°C as maximum junction temperature. The air cooling power dissipation density of the 15 kV IGBT is experimentally validated using a dc-dc boost converter at 10 kV, 6.4 kW output and 550 W/cm
²
under steady state operating conditions. The gate resistances used for the entire experiments are R
G(ON)
= 20 Ω and R
G(OFF)
= 10 Ω.