A design study of pattern-like micro-circuit lines for touch screen ITO surface

The study plans to adopt electrochemical engineering as the technological premise for touch screen ITO (Indium Tin Oxide) thin membrane etching by utilizing the electrochemical process to remove the conductive material ITO deposited on the D.C. positive charge. By coordinating the masked patterns as the template for etching on the iPhone ITO thin membrane layer with pattern-like micro-fine lines, it simplifies the previous metal etching's multilevel processes (the photoresist coating, exposure, imaging, etching of the photoresist and so forth) into a simple one-step process (mask-based electrochemical etching). The study findings show that: using the appropriate process parameters (including the electrical conditions; electrochemical liquid control; electrochemical byproduct removal and such) is able to derive a preferred etching quality on the line's side flange. Using a higher temperature or higher concentration of the processing liquid is able to derive a higher ITO line etching speed. Using a smaller electrode gap or a larger processing fluid velocity can all derive a higher removal speed on touch screen ITO line etching. Using a smaller electrode (negative charge) plate thickness or a smaller electrode (negative charge) circumference radius is able to derive a higher touch screen ITO line etching speed. The pulsed current is conducive in rapidly removing the electrochemical byproduct and is also able to execute a faster work object's feeder rate, but does bring up the designated current input. Using a larger current power, coordinated with a higher work object feeder rate, is able to derive a faster touch screen ITO line etching efficiency. As the masked micro-electrochemical etching method the study proposes is able to rapidly map out a micro-fine line pattern on the surface's touch screen ITO thin member layer within a relative short time.