Improvement of driver to gate coupling circuits for SiC MOSFETS

This work presents a study of the influence of different gate driver circuits on the switching behavior of SiC MOSFET devices used in a buck converter. The paper is based on several tests performed to determine the switching times and switching losses, using different reverse bias V_GS voltage levels and different passive RCD (Resistance Capacitor Diode) circuits to interface the driver to the SiC MOSFET gate. The study reveals that the gate bias and the different coupling circuits have little influence on response time, nevertheless choosing the right combination of reverse bias and coupling capacitor may reduce the switching losses.