Novel area-efficient techniques for improving ESD performance of Drain extended transistors

DEMOS devices have poor ESD robustness due to kirk effect induced snapback. Isolated DEMOS devices, in addition to the kirk effect induced second snapback, are also vulnerable to failures induced by the parasitic NPN to isolation. In addition, we demonstrate here, that some DEMOS devices show intrinsically non-scalable breakdown current (IT1) behavior due to insufficient body resistance. We then demonstrate techniques to restore IT1 scalability in these devices. We finally demonstrate the effectiveness of using selectively SBLKed drain fingers to enable self protection in small DEMOS devices.