Process & design impact on BVDSS stability of a shielded gate trench power MOSFET

This paper discusses the breakdown voltage (BVDSS) characteristics of an n-channel charge balanced shielded gate trench power MOSFET. The study emphasizes on elements that affect the BVDSS stability of such devices to gain good control on design and process/device parameters in order to produce a robust product. Breakdown voltage (BVDSS) walk-in or walk-out can be observed when certain process (e.g., epi doping concentration) and design layout (e.g., termination) conditions are not in coherence.