Impact of multi-finger geometry on the extrinsic parasitic resistances of microwave MOSFETs

Multi-Finger MOSFETs are used to decrease the gate resistance in order to improve microwave-operation figures-of-merit such as the maximum frequency of oscillation. Even though the effect of splitting the gate electrode on the associated resistance has been extensively analyzed, the corresponding influence on the source-drain resistances has not been the subject of much research. We herein present an analysis of the series parasitic resistances of MOSFETs with different number of fingers.