Neuron-MOSFET junction with sodium potassium voltage gate channel

The Electrical interaction and the signaling process between a neuron and a metal oxide semiconductor field effect transistor (MOSFET) in a nanostructure circuit have led to a growing interest in computer brain interface. A wide variety of neuron silicon sensors and systems have been developed [2]. Typically, such brain chip interfaces rely on miniature sensors/electrodes that can get inside the interfaces between neuron and silicon to measure and show advance reactions. Neuron-MOSFET junctions with sodium and potassium voltage gate channels have also been reported recently. The earlier stage of neuron silicon interfaces were conventional biological sensors or devices attached to the neuron. Such approaches have their limitations because their charge carriers are different - electrons in a solid ion lattice and ions in a polar fluid. Electrons in silicon have a mobility of about 10³ cm²/Vs, whereas the mobility of ions in water is around 10⁻³ cm²/Vs. That enormous difference of mobility is at the root for the different architecture of the two information processors and integration between biological and electronics system [22]. In this paper, Neuron-MOSFET junction with sodium and potassium voltage gate channel system using MOSFET sensor is presented. The junction, developed with intelligent materials and different technologies, is an integral part of Computer Brain Interface (CBI). Such a sensor with integrated nanostructure can transmit a signal from one neuron to other neuron if there is any damage in nerve system and send data to any external device for bionic limbs, remote health monitoring, biomedical application and health delivery. The paper will also present the simulation of the MOSFET based junction integrated with chemical message from a dendrite. It is an intellectual and technological challenge to join these different systems directly on the level of electronic and ionic signals [22].