Ultrathin body germanium-on-insulator (GeOI) MOSFETs fabricated by transfer of epitaxial Ge films on III–V substrates

We report the first demonstration of thin body GeOI MOSFETs fabricated by a novel GeOI fabrication process based on epitaxial Ge grown on III–V compound semiconductor wafers. Normal operation of n- and p-MOSFET is confirmed for GeOI with thickness of 55 to 15 nm. The ION/IOFF ratio at room temperature is about 10⁴ and the peak effective hole and electron mobility of 122 and 235 cm²/Vs, respectively, have been obtained for 15-nm-thick-GeOI n- and p-MOSFETs.