Demonstration of Germanium nMOSFETs with interface passivation of ozone pre-gate treatment and ozone ambient annealing

Germanium nMOSFETs with Ge/GeO₂/HfO₂/TiN gate stacks are fabricated and analyzed. The Ge/HfO₂ interface is passivated using ozone pre-gate treatment and ozone ambient annealing method to form a Ge/GeO₂/HfO₂ gate stack. The fabricated devices show promising electrical characteristics. The peak electron mobility of 586 cm²/Vs reflects the effective passivation results of the dual ozone treatment method.