A comparative study of radio frequency stability performance of Double Gate MOSFET and Double Gate Tunnel FET

This paper presents comparative study on radio frequency (RF) stability performance of Double Gate MOSFET (DG-MOSFET) and Double Gate Tunnel FET (DG-TFET). A non-quasi static small signal model is used to extract small signal parameters which are then verified with extracted parameters through simulation. The high frequency performance of DG-MOSFET and DG-TFET is evaluated by extracting RF Figure of Merit (FoM) such as cut-off frequency (f
t
), maximum oscillation frequency (f
max
) along with stability factor. The result shows that DG-TFET has better cut-off frequency and stability performance as compared to DG-MOSFET.