Fabrication of SnS Using PECVD Method With Combined Solid Sources

A flat capacitively coupled plasma enhanced chemical vapor deposition reactor is used to prepare tin sulfide thin films. In this equipment, the plasma is generated by a radio-frequency power supply with the frequency of 13.56 MHz, and there are three quartz crucibles fixed on the side of the chamber between the two electrodes, which is a novel design from general plasma enhanced chemical vapor deposition facility. The images of the plasma discharge are presented, and a fiber optic spectrometer (AvaSpec-2048) is used to monitor the different plasma discharged states. The SnS films are obtained with power ranges from 80 to 120 W and vapor of the solid sources at 50-Pa pressure. The prepared films possess the excellent photo-electricity property.