Full-band transport in ultra-narrow p-type Si channels: Field, orientation, strain

We present a framework for modeling the low-field mobility of ultra-narrow Si channels such as nanowires or FinFETs based on a full-band description of the electronic structure. Hole mobility is of particular interest since its calculation necessitates a full-band approach. Using cylindrical nanowires of different crystal orientation as a model for an ultra-narrow channel, we investigate the transport distribution and demonstrate the effects of orientation, bias, and strain on the mobility.