Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE

High quality pseudomorphic Al
_0.15
Ga
_0.85
As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray diffraction (HRXRD). The nominal structure was confirmed by HRXRD, and aluminum mole fraction was measured from peak separation of the AlGaAs-GaAs (004) reflections. The layer thickness, and interface roughness were estimated from X-ray reflectivity (XRR) by fit with computer simulation. The carrier concentration, mobility and sheet resistance were measured from temperature dependent Hall experiment. The transport properties of the as-grown structure are found to be at par with the best literature reports.