Measurement of minority carrier transport parameters in heavily doped shallow implanted layers

Test structures measuring the hole transport parameters in arsenic-implanted shallow emitters were designed and fabricated. The effects of annealing and gettering on the transport parameters are investigated. The measured diffusion length in implanted emitters with well-controlled processing conditions is close to the values in an epitaxially grown layer (phosphorus doped). Simplicity and reliability should allow these structures to be employed in real processing lines.<>