Comparison of S-parameters based and non-linear model based power amplifier designing techniques

This paper presents the designing and implementation of Si based GaN HEMTclass-AB boaster amplifier using S-parameters (S2P file) as well as its non-linear model at 2.3 GHz. The aim of this workis topropose an alternative designing approach using S-parameters (S2P file) in the absence of its nonlinear model. The fabricated booster amplifier give 34.5dBm output power, 15 dB gain and 50.27 % Power added efficiency (PAE). The simulated and measured results are very much comparable in both cases.