Two-Sided Silicon Nanowire Array/Bulk Thermoelectric Power Generator

To improve the output power of n-and p-type Si nanowire array (NWA)/bulk thermoelectric power generators (TEGs) fabricated using metal assisted chemical etching, post-nanowire-etch spin-on-doping (SOD), and arrays on both sides of the bulk are used. Post-process SOD increases the power factor and removes surface depletion/inversion effects while maintaining crystalline NWs. A maximum output power of 3.5 μW for a p-NWA/bulk/NWA TEG with NWA length of 23 and 24 μm is obtained for an external temperature difference of 37 °C and a TEG area of 25 mm².