Gain characteristics of InGaN/GaN quantum well diode lasers

Summary form only given. We report on gain spectra of InGaN/AlGaN MQW SCH diode lasers, grown and fabricated on 6H-SiC substrates. The active medium was composed of 8 QWs with a nominal indium composition of x=0.1. The devices were index guided ridge waveguide structures with a typical cavity length of 500 /spl mu/m and a mesa width of 5 /spl mu/m. The gain studies are based on the analysis of the spontaneous emission spectra of the devices, collected normal to the resonator axis as a function of injection, while making use of fundamental connections between spontaneous emission, stimulated emission, and absorption. An example of the gain/absorption spectra in the InGaN MQW diode laser at room temperature is shown.