A novel driving circuit topology to improve IGBT gate driving performance

The conventional totem-pole BJT used in IGBT gate driving circuit limit the maximum output current due to desaturation of BJT's collector-to-base voltage. This paper presente a novel circuit topology to increase the output current of totem-pole BJT and also decrease the BJT power loss. As a result, the switching speed of IGBT can be raised and the switching loss of IGBT is reduced. At last, both the Pspice simulation and experimental results based on the HCPL-316J driving IC verity the advantage of the topology.