Study of semiconductor nitrides thin films for photovoltaic (PV) applications

We present in this work results on semiconductor nitride thin films as grown by Close Space Vapor Transport (CSVT) and Laser Ablation (LA). The films were processed in different substrates and were characterized by X-Ray Diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy, Transmission Electron Microscopy (TEM) and Photoluminescence (PL). The processed films are conformed by substrate/GaN or /n-GaN or /p-GaN. In general the results indicate that the films are suitable for photovoltaic applications. We discuss our results according to the present state of the art of the PV devices of these materials.