Characterization of bulk defect response in Cu(In, Ga)Se2 thin-film solar cell using DLTS

Deep level transient spectroscopy has been used to study the spatial properties of the N1-admittance feature in Cu(In, Ga)Se₂ devices. By comparison to admittance spectra, the N1-admittance feature has been identified in deep level transient spectra. By varying the filling pulse voltage used to generate the deep level transient spectra, the spatial properties of the N1-admittance feature are determined. In particular, the N1-admittance feature is shown to arise from a uniformly distributed bulk defect in the sample studied.