Application of 3D stacking technology to SOI radiation image sensor

Next generation pixelated radiation image detector requires intelligent data processing within each pixel. Since the number of transistors implemented in the pixel area is limited, 3D stacking is indispensable technology in this kind of detector. We have fabricated a stacked SOI radiation image sensor by using μ-bump technology of 5 μm pitch. DC characteristics of transistors located in lower and upper tiers are successfully measured.