An RF MEMS switch for 4G Front-Ends

OMRON developed a practical single pole double throw (SPDT)-structured RF-MEMS switch for 4G Front-Ends of next generation mobile handsets. This RF-MEMS switch has not only a very low insertion loss of less than 0.25dB and a high isolation of more than 30dB up to 3GHz but also high linearity and very low harmonic generation. The switch achieves small size by using Through Silicon Via (TSV) structure. And also we demonstrate 3V driving switch by integrating a charge pump IC.