First demonstration of W-band millimeter-wave flexible electronics

This paper presents a novel method to fabricate substrate-less flexible and printable electronics for microwave and millimeter-wave applications. InP HEMT technology is utilized in this work to demonstrate first W-band completely flexible low noise amplifier (LNA). 10dB gain per stage is achieved at 100GHz for a 2×25μm device as expected from the EEHEMT model with simulated noise figure (NF) of 2.0. The fabrication process and measurement results are discussed in detail.