The change in on-resistance in GaN HEMTs operating in a buck configuration

In this paper the change in on resistance found in GaN HEMTs is discussed. This test was composed to ensure we have a consistent R_DS(ON). The interest exists to determine if the efficiency drops due to conduction losses and ensure the longevity of the part [1]. The EPCs 2015 HEMTs were tested in a buck converting configuration under a 10A load. R_DS(ON) of MOSFETs directly impact converter efficiency. GaN MOSFETs have a characteristic called dynamicR_DS(ON). Prolonged use of previous generations GaN FETs resulted in an increase in the devices on-resistance, reducing the overall converter efficiency. The efficiency is reduced due to conduction losses, dissipating power as heat [2].