Porous and RF sputtering InP for portable THz-TDS in pharmaceutical and medical applications

We developed a technology for deposition of metal contacts/wires upon nanoporous InP thin film structures and RF sputtered InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50-100°C), under constant argon pressure (6.3·10^-3 Bar) and RF power (40-100 W).