A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs

In this paper, we present a fully-scalable compact small-signal equivalent circuit model for AlGaN/GaN HEMTs with a gate length of 100 nm. The compact model yields a parasitic shell topology and is scalable from two up to eight transistor-fingers and is valid for finger lengths from 15 μm to 100 μm. It accurately covers the frequency range from 100 MHz up to at least 110 GHz and a wide range of bias utilized for typical class-AB operation points of this technology. Both, direct parameter extractions as well as optimization-based techniques were applied for the determination of the model parameters.