Soft-Error in SRAM at Ultra-Low Voltage and Impact of Secondary Proton in Terrestrial Environment

This paper presents soft-error measurement results through neutron and alpha irradiation tests and simulation in SRAM at ultra-low voltages, down to 0.19 V. Soft-error-rate at 0.19 V is higher than at 1.0 V by two orders of magnitude. This measurement result supported by simulation clarifies that direct ionization from secondary protons generated by nuclear reaction with neutron collision contribute to a dramatic increase in SRAM soft-error-rate at ultra-low voltages in terrestrial environment.