Characterization of the RF emissions from a family of microprocessors using a 1 GHz TEM cell

This paper examines the radiated RF emissions from a family of microprocessors expanding on our previous investigations into this area. The procedure used was SAE J1752-3, which specifies a radiated emissions measurement system using a 1 GHz TEM cell with the IC under test on a standardized test board that is a part of the wall above the septum of the TEM cell. This procedure provides a controlled test environment and has been developed to characterize high speed VLSI ICs and survey the variation of RF emissions due to changes in IC process and package parameters. Our investigation involved evaluating the effects on radiated RF emissions from the microprocessors due to processor type, operating software, die mask level, die fab site, die fab date code and fab process variation. The intent is to build a database that will facilitate an assessment of the impact of process changes on the RF emissions from microprocessors.