Analysis of deviation from Pelgrom scaling law in Vth variability of pocket-implanted MOSFET

This paper analyzes cause of deviation from Pelgrom scaling law in threshold voltage (V_th) variability of pocket-implanted long channel MOSFET. It has been reported that this deviation from Pelgrom scaling law becomes remarkable in 65nm and beyond technologies. It is clarified that deviation from Pelgrom scaling law is attributed to increasing behavior of offset-voltage variability σ(ΔI/g_m) in weak and moderate inversion regions. It is found that this increasing behavior of σ(ΔI/g_m) can be completely eliminated by using both-side (BS) ring gate structure. This means that deviation from Pelgrom scaling law is caused by subthreshold hump.