A high temperature, double-sided cooling SiC power electronics module

A high temperature, wire-bondless power electronics module with a double-sided cooling capability is proposed and successfully fabricated. In this module, a low-temperature co-fired ceramic (LTCC) substrate was used as the dielectric and chip carrier. Conducting vias were created on the LTCC carrier to realize the interconnection. The absent of a base plate reduced the overall thermal resistance and also improved the fatigue life by eliminating a large-area solder layer. Nano silver paste was used to attach power devices to the DBC substrate as well as to pattern the gate connection. Finite element simulations were used to compare the thermal performance to several reported double-sided power modules. Electrical measurements of a SiC MOSFET and SiC diode switching position demonstrated the functionality of the module.