An IGBT with sustaining voltage determined by an integrated collector-gate clamp

An insulated gate bipolar transistor (IGBT) with an integrated gate-collector clamp diode is discussed. This added feature provides protection from self-avalanche and provides a tight control of sustaining voltage over temperature. The on-chip integration of this feature eliminates two or more external components previously used in many applications. The device displays characteristics that are advantageous in applications such as automotive ignition drivers and industrial motor controls.<>