Scalable, monolythically-integrated detectors for THz imaging

We discuss two different implementations of field-effect-transistor based detectors (TeraFETs) optimised for imaging above 1 terahertz (THz). (i) Resonant-antenna-coupled MOSFET rectifiers have been fabricated using CMOS technology and (ii) broad-band devices by exploting GaN/AlGaN high-electron-mobilitiy transistors. Both technologies are scalable to large detector arrays and allow realisation of sensitive detectors deep in the THz frequency range.