Parabolic double quantum well structures: Study of multisubband electron mobility

We calculate multisubband electron mobility in a Al_xGa_1-xAs parabolic double quantum well structure. The wells are formed by varying x from 0 to 0.1. For barriers we take x=0.3. The side barriers are delta-doped with Si. The electrons diffuse into the adjacent wells inducing triangular like potential profiles near the interfaces. The structural potential within the well partly compensates the Coulombic potential resulting shifting of the subband electron wave functions towards the centre of the wells. We analyse the effect of the compositional parabolic potential on the multisubband electron mobility which shows interesting results mediated by intersubband interactions.